High-resolution electron microscopy observations dislocations

As will be seen below, the presence of dislocations has the effect of producing local disturbances of the atomic-level geometry that are so severe as to produce scattering that is not consonant with that from the remainder of the crystal, giving rise to the contrast revealed in the figure. Evidently, the onset of plastic deformation reveals its presence at multiple scales simultaneously. Indeed, as was seen in fig. 1.9, the properties of individual dislocation cores can be observed using high-resolution transmission electron microscopy. 

L., and Gaskill, D. (1995) Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high-resolution transmission electron microscopy Appl. Phys. Lett. 61, 2284. Copyright 1995, American Institute of Physics. 

Studies on the interfacial microstructure via high resolution transmission electron microscopy (HRTEM) have been performed to verify the existence of dead layer between BST films and Pt or SrRuOs electrodes. Formations of misfit dislocations, planar fault, and disordered or amorphous regions have been reported [19,27,29-33], More recently, we have observed two distinct types of interfaces between BST films and Pt electrodes via HRTEM [34]. One case is the presence of interfacial layer with distorted structure (type I), as shown in Figure 1 (a). Another case, called type II, is exhibited in Figure 1 (b), in which good interfacial match with no interfacial layer is observed. 

---