High-dose ion implantation

However, more careful consideration should be given if there is preferential sputtering between atoms of the host material and those of the implanted species. There is also an interesting variation when ion species A is implanted into a compound, AB. In this analysis it will be assumed that atomic mixing is very efficient, so that the implanted species spreads out rather uniformly over an effective width RP, after an initial amount of implantation, say 1016 atoms cm 2. The shape of the profile is assumed to remain approximately unchanged, with its amplitude increasing with further implantation. This model is illustrated in Fig. 12.8. 

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Figure 20. Ion implantation defect production models for low- and high-dose B implants into crystalline and preamorphized Si. Csoi is the solid solubility...

Fig. 9. Schematic view of the development of the concentration profile of ions implanted from low (L), medium (M), and high (H) doses. The projected...

It is not currently economic to use high dose (>10 ions cm ) implantation for other than very high added value majp rials. Dgses used in the electronics industry are typically ca 10 ions cm There may, however, be applications for small area high dose applications including eg patterned inorganic synthesis. One example is the production of thin tracks of hard Si C from organosilanes (22). X ... 

Lulli, G., et al., The Monte Carlo Binary Collision Approximation Applied to the Simulation of the Ion Implantation Process in Single-Crystal SiC High-Dose Effects, Mater. Sci. Forum, Vol. 335-356, 2001, pp. 599-602. 

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