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Heterojunction bipolar transistor structures

Certain features in the PR spectra at 300 K from GaAs/Gai j,jAlj heterojunction bipolar transistor structures have been correlated with actual device performance thus PR can be used as an effective screening tool. From the observed FK oscillations it has been possible to evaluate the built-in dc electric fields in the Gai j jAlj emitter, as well as in the n—GaAs collector region. The behavior... [Pg.393]

Thermal stability of Si/Sii xGex/Si heterojunction bipolar transistor structures grown by limited reaction processing, Applied Physics Letters 55, 1978-1980. [Pg.792]

In real device structures like heterojunction bipolar transistors, certain features in the PR spectrum can be correlated with actual device performance. Thus PR has been employed as an effective contacdess screening technique to eliminate structures that have imwanted properties. [Pg.398]

FigurelS.lO (a) Molecular structures of the n- (b) Schematics of bipolar field-effect transistors channel (BBL) and p-channel polymer based on n/p polymer heterojunctions, (c)... FigurelS.lO (a) Molecular structures of the n- (b) Schematics of bipolar field-effect transistors channel (BBL) and p-channel polymer based on n/p polymer heterojunctions, (c)...
See other pages where Heterojunction bipolar transistor structures is mentioned: [Pg.392]    [Pg.518]    [Pg.503]    [Pg.392]    [Pg.518]    [Pg.503]    [Pg.386]    [Pg.421]    [Pg.422]    [Pg.242]    [Pg.244]    [Pg.265]    [Pg.121]    [Pg.385]    [Pg.5]   
See also in sourсe #XX -- [ Pg.392 ]



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