Growth on off-angle diamond surfaces

Since diamond CVD is undertaken at 800 °C, and the stress at the interface is generally very high when the specimen is taken out of the reactor to the ambient environment because of the difference in the thermal expansion coefficients between the CVD diamond film and the substrate. In addition, the intrinsie stress within the CVD diamond film is high if it is polycrystalline. The presence of grain boundaries can be the cause of the intrinsic stress. Thus, reducing both interfacial and intrinsic stresses is an important issue for practical use of CVD diamond films. So far, no effective method has been found to solve this problem. 

It may not be an overstatement to say that homoepitaxial growth technology on (100) surface has been revolutionarily changed by Okushi s group by using 

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