Growth of ultrathin ferroelectric films

The PbTi03 films were grown epitaxially on SrTiOs (001) substrates as described previously [2], Cation precursors were either titanium isopropoxide (tip) or titanium tertbutoxide (ttb), and tetraethyl lead (tel). The oxidant was O2, with N2 carrier gas. Films were typically deposited at 750°C at a total pressure of 10 Torr (P02 = 2.5 Torr). Under appropriate growth conditions, the PbTi03 films replicated the high crystalline quality of the substrates (0.01° typical mosaic). Films thinner than 40 nm remained lattice matched with the SrTiC 3, while the epitaxial strain was mostly relaxed in thicker films. 

8 In-Situ Synchrotron X-ray Studies of Processing and Physics of Ferroelectric Thin Films 

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