Growth in LPCVD Cold-wall Reactor

The growth of 3C-SiC on porous 3C-SiC took place in the cold-wall reactor. This was essentially a homo-epitaxial growth process. Therefore, the etching and carbonization steps were not needed. 

Further investigations were conducted to determine the quality of the standard and RIE etched porous SiC samples using LTPL analysis, again performed by the group of W.J. Choyke at the University of Pittsburgh. The photoluminescence intensity of the 3C-SiC epilayers increased approximately ten and five times that of the standard 3C-SiC for the 52 and 72 pm thick RIE etched porous 3C-SiC substrates, respectively. In addition, the no-phonon nitrogen bound exciton Nc line 

---