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Growth by MOCVD

Thermodynamic predictions of the solid-phase composition have been very successful for the growth by MOCVD of group III-V compound semiconductors (e.g., InAs Sb and GaAs SbJ even though the gas-phase reactions are far from equilibrium (88-91). The procedure is also useful for estimating solid-vapor distribution coefficients of group II-VI compound semiconductors (e.g., Cd Hg e and ZnSe SJ grown by MOCVD (92). In the analysis, the gas phase is considered to be an ideal mixture, that is... [Pg.223]

Another quaternary in this system is Ini 3,(ALi Gai- ) v As, which can be grown lattice matched to InP substrates. These materials are grown by MOCVD using the precursors cited above with the addition of TMA1. Recently, this quaternary has shown promise for the growth of advanced high-performance injection lasers operating... [Pg.422]


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MOCVD

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