Grain boundaries vacancies

If tlie level(s) associated witli tlie defect are deep, tliey become electron-hole recombination centres. The result is a (sometimes dramatic) reduction in carrier lifetimes. Such an effect is often associated witli tlie presence of transition metal impurities or certain extended defects in tlie material. For example, substitutional Au is used to make fast switches in Si. Many point defects have deep levels in tlie gap, such as vacancies or transition metals. In addition, complexes, precipitates and extended defects are often associated witli recombination centres. The presence of grain boundaries, dislocation tangles and metallic precipitates in poly-Si photovoltaic devices are major factors which reduce tlieir efficiency. 

Diffusion is based mainly on the diffusion of vacancies grain boundaries may act as sinks for these vacancies. This vacancy movement and annihilation cause the porosity of the powder compact to decrease during sintering. 

Fig. 10.4. Ball bearings can be used to simulate how atoms are packed together in solids. Our photograph shows a ball-bearing model set up to show what the grain boundaries look like in a polycrystalline material. The model also shows up another type of defect - the vacancy - which is caused by a missing atom.

Grain boundaries form junctions between grains within the particle, due to vacancy and line-defect formation. This situation arises because of the 2nd Law of Thermodjmamics (Entropy). Thus, if crystallites are formed by precipitation from solution, the product will be a powder consisting of many small particles. Their actual size will depend upon the methods used to form them. Note that each crystallite can be a single-crystal but, of necessity, will be limited in size. 

The kinds of substitution mechanisms that may be relevant to super-low concentration elements such as Pa involve intrinsic defects, such as lattice vacancies or interstitials. Vacancy defects can potentially provide a low energy mechanism for heterovalent cation substitution, in that they remove or minimise the need for additional charge balancing substitutions. Formation of a vacancy per se is energetically unfavourable (e.g., Purton et al. 1997), and the trace element must rely instead on the thermal defect concentration in the mineral of interest, at the conditions of interest. Extended defects, such as dislocations or grain boundaries, may also play a key role, but as these are essentially non-equilibrium features, they will not be considered further here. 

The D band, the disorder induced mode, normally appears between 1250 and 1450 cm. This band is activated in the first-order scattering process of sp2 carbons by the presence of in-plane substitutional hetero-atoms, vacancies, grain boundaries or other defects and by finite-size effects [134], The G band is the second-order overtone of the D band. 

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