Glow discharge anode layer

The most common deposition technique is the glow-discharge decomposition (gdd) of volatile inorganic compounds - e.g., SiH4 to make a-Si H. Several variants are available where the ionized plasma is driven by a dc electric field (with the substrate on either the anode or the cathode), an ac field (60 Hz), an rf inductive, or rf capacitive (sometimes with a superposed dc bias). These techniques can be used in the presence of a magnetic field. The pressure of SiH4 is in the range 1 to 700 Pascal with the substrate at 200 300°C. Above 350°C, H2 evolves from the a-Si H layer ... 

Molchan, I.S., Thompson, G.E., Skeldon, R, Trigoulet, N., Tempez, A., Chapon, P. (2010) Analysis of thin impurity-doped layers in anodic alumina and anodic tantala films by glow discharge time-of-flight mass spectrometry. Trans. Inst. Met. Finish, 88(3). 

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