Germanium, surface recombination velocity

Many investigations with surfaces have been carried out in this and other laboratories using the ion-bombardment method of cleaning. These include (1) structure investigations of the surface plane on clean surfaces, (2) work-function determinations, (3) adsorption measurements, (4) catalysis, (5) surface recombination velocity, (6) surface conductivity, and (7) field effect. One of the significant finds indicates that the relative positions of the atoms in the clean 100 surface planes of germanium and silicon are not the same as those of similar planes in the bulk crystals, but that these relative positions are the same when a monolayer of oxygen is adsorbed on these surfaces (9). 

E. Yablonovitch, D. L. Allara, C. C. Chang, T. Gmitter, and T. B. Bright, Unusually low surface-recombination velocity on silicon and germanium surfaces, Phys. Rev. Lett. 57, 249, 1986. 

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