Gate high dielectric constant

Dimitrakopoulos, C. D. Purushothaman, S. Kymissis, J. Callegari, A. Shaw, J. M. 1999. Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators. Science 283 822-824. 

Robertson, J. 2006. High dielectric constant gate oxides for metal oxide Si transistors. Rep. Prog. Phys. 69 327-396. 

In the semiconductor technology area most of the experience has been accumulated from research and development in cleaning the silicon substrates. For CMP technologies a variety of additional materials are involved — insulators (like SiOj. doped SiOj, and polymers), high dielectric constant materials (like BaTiOj), polysilicon (doped or undoped), silicides to form low resistivity gate interconnections on top of doped polysilicon, metals (like Cu and Al, and their alloys, W, metal-nitrides, and Ta), silicon nitride, and many others, some of which have been discussed in earlier chapters. Thus cleaning processes must be... 

C. D. Dimitrakopoulos, S. Purushothaman, J. Kymissis, A. Callegari, and J. M. Shaw. Low-Voltage Organic Transistors on Plastic Comprising High-Dielectric Constant Gate Insulators. Science, 283(5403) 822-824, February 5, 1999 1999. 

The concept of nanohybrid materials has been also used for preparing materials with high dielectric constant (high k materials), which are useful as capacitors and gate materials in integrated electronic circuits. Synthesis of high k materials has been shown to be of fundamental relevance for the development of new generation dynamic random access memories and micro-electromechanical systems. 

Wallace RM, High dielectric constant gate oxides (private communication). 

Materials with better properties are also of interest as possible replacements for aSiO for gate oxide applications, since the ultrathin SiO layers required for low-voltage, high-drive logic is inherently too leaky to be employed. Instead, a thicker layer of a material with a higher dielectric constant is needed. As in capacitor appli-... 

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