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Gallium phosphorus

Hyperpure silicon can be doped with boron, gallium, phosphorus, or arsenic to produce silicon for use in transistors, solar cells, rectifiers, and other solid-state devices which are used extensively in the electronics and space-age industries. [Pg.34]

The only simple diphosphide complex in Table IV is /-Bu-Ga(PHMes ")2,82 which has Ga—P bond lengths averaging 2.325 A. This distance is, with one exception, longer than those observed in the monophosphide complexes. This is consistent with a weak but significant gallium-phosphorus 7r-interaction where competition between two phospho-... [Pg.36]

The 3IP NMR chemical shifts, shown in Table IV, should be a useful indicator of the electronic environment at phosphorus. Almost all the 3IP chemical shifts are upfield (negative 8 values) in contrast to the boron-phosphorus compounds where downfield shifts (positive 8 values) are observed. This can be interpreted in terms of weak gallium-phosphorus it-... [Pg.37]

T = 7 . above which the liquid and gas phase are no longer distinguishable. Since the liquid can he continuously converted into Ihe gas phase without discontinuous change of properties by any path in the P — T diagram passing above the critical point, there is no definite boundary between liquid and gas. Two liquids ol similar molecules are usually. soluble in all proportions, but very low solubility is sufficiently common to permit the demonstration of as many as seven separate liquid phases in equilibrium at one temperature and pressure (mercury, gallium, phosphorus. perHuoro-kerosene, water, aniline, and heptane at 50 C. I atmosphere). [Pg.938]

Table 3,6. Interatomic distances in some gallium-phosphorus dimeric and trimeric supermolecules. Table 3,6. Interatomic distances in some gallium-phosphorus dimeric and trimeric supermolecules.
Peltier V., Conanec R., Marchand R., Laurent Y., Delsarte S., Gueguen E., Grange P. A novel family of mixed gallium phosphorus oxynitrides their synthesis, characterization and utilization in heterogeneous catalysis. Mater. Sci. Eng. B 1997 47 177-183 Sakka S., Kamiya K., Yoko T. Preparation and properties of Ca-Al-Si-O-N oxynitride glasses. J. Non-Crystalline Solids 1983 56 147-152... [Pg.183]


See other pages where Gallium phosphorus is mentioned: [Pg.358]    [Pg.27]    [Pg.32]    [Pg.34]    [Pg.38]    [Pg.39]    [Pg.395]    [Pg.396]    [Pg.139]    [Pg.140]    [Pg.932]    [Pg.416]    [Pg.214]    [Pg.1367]    [Pg.372]    [Pg.59]    [Pg.61]    [Pg.62]    [Pg.26]    [Pg.1366]    [Pg.683]    [Pg.675]    [Pg.724]    [Pg.14]    [Pg.468]    [Pg.91]    [Pg.662]    [Pg.757]    [Pg.730]    [Pg.721]    [Pg.214]    [Pg.755]   
See also in sourсe #XX -- [ Pg.2 , Pg.4 , Pg.5 , Pg.7 ]




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Gallium-phosphorus adducts

Phosphorus and Gallium

Phosphorus gallium-carbon bonds

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