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Gallium nitride thermal properties

Nakano and Jimbo investigated the interface electronic properties of thermally oxidized n-type GaN metal-oxide-semiconductor (MOS) capacitors [230]. The formation of an intermediate gallium oxide nitride layer vith a graded composition could provide the origin of a small capacitance transient observed experimentally. [Pg.123]

See other pages where Gallium nitride thermal properties is mentioned: [Pg.852]    [Pg.154]    [Pg.93]    [Pg.111]    [Pg.112]    [Pg.122]    [Pg.123]    [Pg.79]    [Pg.172]    [Pg.430]    [Pg.41]    [Pg.387]    [Pg.388]    [Pg.114]   
See also in sourсe #XX -- [ Pg.621 ]

See also in sourсe #XX -- [ Pg.621 ]



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