Free hole concentration

Fig. 4. Arrhenius plot of the free hole concentration in a beryllium-doped germanium crystal grown in a hydrogen atmosphere. The shallow acceptor A(Be,H), present at a concentration of 1013 cm-3, is shown to dissociate under thermal annealing. 

Fig. 9. Arrhenius plots of the free hole concentration p (log p versus 1000/T) in two samples cut from a partially dislocated slice of ultra-pure germanium. The dislocation-free sample contains an acceptor with Ev + 80 meV. The shallow level net-concentration is the same in both samples.

Figure 19 shows the free hole concentration as a function of reciprocal temperature for the samples implanted with B, co-implanted with C and B (C/B) and co-implanted with Si... 

Figure 19 Free hole concentration as a function of reciprocal temperature for B- (triangles), C/B-(circles), and C/Si-implanted (squares) SiC. Solid lines represent the fitting results.

Extending the definition of n-type and p-type reactions, as defined by Vol kenshtein (21) to the electron transfer step, it would seem that the only reaction given by Equation 1 is a p-type reaction. This reaction would be accelerated by the increase in the value of free hole concentration. On the other hand, all other reactions besides the one given by Equation 1 are n-type and would be accelerated by the increase in free electron concentration. Hydrocarbon oxidation reactions catalyzed by solid oxides are accompanied by oxidation and reduction of the catalyst and the degree of the stoichiometric disturbance in the semiconductor changes. The catalytic process in the oxidation of 2-methylpropene over copper oxide catalyst in the presence of Se02 can be visualized as ... 

UcfE) represents the density of states in the conduction band. Similarly, the free hole concentration p in the valence band is written ... 

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