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Flat growth

The resistance of the electrolyte causes a potential drop that is linearly distributed in the electrolyte inside the pores and thus does not have an effect on the current distribution on the pore bottom. However, the potential drop in the electrolyte has an important effect in maintaining the flat growth front of the PS layer as will be discussed later. [Pg.197]

Different exposed crystal surface planes have different relative reactivities. The flat growth surfaces of solution-grown crystals tend to retain small irregularities, due to uneven development and accumulation of impurities during removal of last traces of solvent. (Surfaces may also be damaged during handling.)... [Pg.15]

A Sio.8iGeo.i9 alloy film is grown epitaxially on a (001) surface of the Si substrate. Estimate the critical wavelength Aor as defined in (8.61) for the nominally flat growth surface of the film. Base the calculation on the values of elastic constants given in Table 3.1 and the surface energy value of f/g = 1.2 J/m for the alloy. [Pg.629]

Suppose that only certain discrete values of slope of the lateral surface of the island are possible. In this subsection, implications of this assumption are examined for circumstances in which more than one such preferred lateral face orientation exists. The surface energy density of the substrate surface or flat growth surface is 70. Once it is nucleated at a certain aspect ratio, say ai, the volume V of an island continues to increase, due perhaps to deposition or coarsening, but with fixed aspect ratio aj. The surface energy density of the orientation is 71. Within the context of the model of cone-shaped islands, the free energy per unit volume of material in the island is... [Pg.686]

Once a sample is properly oriented and polished, it is placed into a UHV chamber for the final preparation steps. Samples are processed in situ by a variety of methods in order to produce an atomically clean and flat surface. Ion bombardment and aimealing (IBA) is the most conunon method used. Other methods include cleaving and film growth. [Pg.303]

Water Treatment. Chlorine is an excellent bacteriostat, unsurpassed for use in residual water treatment and growth is expected to remain flat through 1992. Attempts by municipal and industrial water treatment faciHties to improve economics by increasing chemical efficiency and concerns over chlorine s involvement in the formation of undesirable organic compounds are the reasons for 2ero growth. [Pg.517]

Entrance flow is also accompanied by the growth of a boundary layer (Fig. 5b). As the boundary layer grows to fill the duct, the initially flat velocity profile is altered to yield the profile characteristic of steady-state flow in the downstream duct. For laminar flow in a tube, the distance required for the velocity at the center line to reach 99% of its asymptotic values is given by... [Pg.91]

Styrene—butadiene elastomers, emulsion and solution types combined, are reported to be the largest-volume synthetic mbber, with 28.7% of the world consumption of all synthetic mbber in 1994 (38). This percentage has decreased steadily since 1973 when SBR s market share was 57% (39). The decline has been attributed to the switch to radial tires (longer milage) and the growth of other synthetic polymers, such as polyethylene, polypropylene, polyester, and polystyrene. Since 1985, production of SBR has been flat (Table 3). [Pg.499]

It is generally observed that the interface between two solids which results from the growth of one phase by condensation to form a film on die other is one in which the number of nearest neighbour bonds between the two phases is maximized. The close-packed planes tend to be found at the interface, which is consequently usually nearly atomically flat and this minimizes die interfacial... [Pg.35]


See other pages where Flat growth is mentioned: [Pg.497]    [Pg.144]    [Pg.367]    [Pg.497]    [Pg.51]    [Pg.684]    [Pg.684]    [Pg.689]    [Pg.752]    [Pg.753]    [Pg.371]    [Pg.429]    [Pg.431]    [Pg.495]    [Pg.497]    [Pg.144]    [Pg.367]    [Pg.497]    [Pg.51]    [Pg.684]    [Pg.684]    [Pg.689]    [Pg.752]    [Pg.753]    [Pg.371]    [Pg.429]    [Pg.431]    [Pg.495]    [Pg.242]    [Pg.186]    [Pg.478]    [Pg.516]    [Pg.517]    [Pg.518]    [Pg.92]    [Pg.548]    [Pg.40]    [Pg.315]    [Pg.180]    [Pg.526]    [Pg.232]    [Pg.45]    [Pg.47]    [Pg.433]    [Pg.490]    [Pg.528]    [Pg.21]    [Pg.271]    [Pg.557]    [Pg.1656]    [Pg.1656]    [Pg.2046]    [Pg.316]    [Pg.65]   
See also in sourсe #XX -- [ Pg.18 , Pg.192 , Pg.193 , Pg.194 , Pg.195 ]




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