Film bending, schematic representation

Schematic representation of an apparatus for the determination of mechanical film stresses using the bending beam technique with optical detection [150].

Fig. 5.9. Schematic representation of the edge force and bending moment for an axisymmetric buckle which forms on a circular region along the film-substrate interface.

As a result of the difference in tensions, the film will bend until reo = ny,. If re > re, the area at the oil side has to expand (resulting in reduction of re ) until reo = rew - in this case a W/O microemulsion is produced. If re(, > re, the area at the water side expands until re = reo. In this case an O/W microemulsion is produced. Figure 10.3 gives a schematic representation of film bending for production of 3 0 or 0 microemulsions. 

Figure 3-7. Schematic representation of the bands of an n-type semiconducting passive film a) at the flat band potential, and b) under anodic polarization with respect to the flat band potential. As the passive film is ultra-thin and the density of states is low, the band bending extends over the whole thickness of the passive film.

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