Evaporation growth

As we are considering an evaporation/growth process that is predominantly diffusion controlled, we adopt Pick s and Fourier s laws in the following form (I) ... 

In the adiabatic evaporative growth type crystallizer shown, the pressure is controlled by recirculating exhausted noncondensables to a vacuum pump suction, and the condensate is returned to the crystallizer body. Returning the condensate maintains a dilution of the impurities in the feed and provides a means of controlling the product purity by preventing crystallization of the impurities. It also lowers the concentration of impurities in the mother liquor adhering to the crystal mass in downstream separation operations. 

Further aspects of crystal growth 4.2 Evaporation growth 67... 

Two DMAs can be used in series or tandem (TDMA) to study processes that change particle size, such as evaporation, growth by condensation, or chemical reac-... 

At first we tried to explain the phenomenon on the base of the existence of the difference between the saturated vapor pressures above two menisci in dead-end capillary [12]. It results in the evaporation of a liquid from the meniscus of smaller curvature ( classical capillary imbibition) and the condensation of its vapor upon the meniscus of larger curvature originally existed due to capillary condensation. We worked out the mathematical description of both gas-vapor diffusion and evaporation-condensation processes in cone s channel. Solving the system of differential equations for evaporation-condensation processes, we ve derived the formula for the dependence of top s (or inner) liquid column growth on time. But the calculated curves for the kinetics of inner column s length are 1-2 orders of magnitude smaller than the experimental ones [12]. 

In the LS analysis, an assembly of drops is considered. Growth proceeds by evaporation from drops withi < R and condensation onto drops R > R. The supersaturation e changes in time, so that e (x) becomes a sort of mean field due to all the other droplets and also implies a time-dependent critical radius. R (x) = a/[/"(l)e(x)]. One of the starting equations in the LS analysis is equation (A3.3.87) withi (x). 

Extended x-ray absorption fine stmcture measurements (EXAFS) have been performed to iavestigate the short-range stmcture of TbFe films (46). It is observed that there is an excess number of Fe—Fe and Tb—Tb pairs ia the plane of the amorphous film and an excess number of Tb—Fe pairs perpendicular to film. The iacrease of K with the substrate temperature for samples prepared by evaporation is explained by a rearrangement of local absorbed atom configurations duting the growth of the film (surface-iaduced textuting) (47). 

Molecular beam epitaxy (MBE) is a radically different growth process which utilizes a very high vacuum growth chamber and sources which are evaporated from controlled ovens (15,16). This technique is well suited to growing thin multilayer stmctures as a result of very low growth rates and the abihty to abmpdy switch source materials in the reactor chamber. The former has impeded the use of MBE for the growth of high volume LEDs. 

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