Etching summary table

Etch pit formation as a result of the factors given in 1-4 above can be used to characterize silicon materials. A summary of common defect etchants for silicon is given in Table 2.1. 

TABLE 1 Summary of etch rate results for GaN, AIN and InN from various dry etching techniques for some typical etchant gases. 

Fig. 7.55. At a microscopic scale, roughness is associated with lattice steps, vacancies, and so only which are determined by the lattice structure of the smface. At a macroscopic level, crystallographic character may be revealed in the topographic features, for example, hillocks formed on the (100) surface. It has been found that the etched surface in 25% KOH has well-defined terraces and step features, whereas it has a nodule type of appearance in 50% KOH solution. Table 7.5 provides a summary of the characteristics of the surface etched features in KOH with respect to the crystal orientation of the surfaces.

A summary of the reported, selectively sacrificial diblock copol5miers and relevant etching methods used to produce porous materials is shown in Table 2.1. Rather few of these systems have yet been explored as electrochemical film templates, largely... 

Table 11.3 presents a summary of etching methods, again in this case not a complete list. 

An attempt is made in Table 29 to summarize the experience obtained with unloaded joints in these two important exposure trials but, such is the nature of a summary in this context, that caution must be exercised in drawing conclusions from the table. The results selected refer to joints made with alloys clad with high purity aluminium in all cases with etched surfaces. 

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