Etching process, high temperature reductive

Table 1 summarizes some microstructural and electrochemical properties of porous Si anode materials, as pertaining to the second approach mentioned above, collected from the literature published since 2005. Several synthesis methods have been identified for preparing the porous Si anode materials (column 1, Table 1). One of the two most adopted methods is known as the metal-assisted chemical etching (MACE denoted as E in Table 1). The fundamental principle of this method can be found in the handbook chapter Porous Silicon Formation by Metal Nanoparticle Assisted Etching. Figure 2 shows an example of the MACE-derived porous Si particle. The other most adopted method is magnesiothermic reduction (denoted as M in Table 1). In this method (see handbook chapter Porous Silicon Formation by Porous Silica Reduction ), porous Si oxide materials are reduced by magnesium vapor under high-temperature thermal treatment. The porous Si oxide precursors may be synthesized via the conventional sol-gel processes. Porous Si particles with unique pore structures, such as hollow interior and ordered mesoporosity, may be obtained from Si oxides having the same pore structures which are achieved by using proper templates.

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