Etch depth elevation

The results show that although POSS-PIs have increased erosion with temperature, they do erode less than their no-POSS analogous at elevated temperatures. In most cases, except at 200 °C, a doubling of the POSS content from 3.5 wt % to 7.0 wt % Si8On, causes the etch depth to decrease by about... 

Venables and co-workers have reported (2) results of depth profiling of the surface oxide layer on Ti 6-4 adherends by AES. Acidic etches lead to rather thin (20 nm) oxide layers whereas anodized oxide films are considerably thicker (40-80 nm). Venables has further reported (3) that initially an amorphous oxide layer forms on Ti 6-4 adherends which can be converted to a crystalline layer at elevated temperatures. 

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