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Erasing Electrical History

1 Responses of Functionalized Hole-Transporting Oligomers, Including Blends and Surface Modifications [Pg.229]

A functionalized sensor with structure as shown in Fig. 7.15b had higher sensitivity and response speed. In this functionalized OFET sensor, 15 nm of 6PTTP6 and HO6OPT semiconductor blend, serving as a functionalized receptor layer, was coevaporated on top of a 35 nm 6PTTP6 film. [Pg.229]

The performance of the two-layer blend FET sensor upon exposure to dilute DMMP vapor was further studied in a test chamber connected to a constant flow rate of gas, which was switched between N2 and DMMP vapors. A bubbler containing DMMP liquid was used as the source of analyte vapor. Nitrogen gas was passed above the liquid surface and carried the analyte vapor to the test chamber. The mass of a bubbler was measured before and after testing to determine the total mass of analyte delivered by a specific volume of carrier gas, thereby allowing calculation of the average concentration of analyte vapor in the test chamber. [Pg.230]


See other pages where Erasing Electrical History is mentioned: [Pg.227]    [Pg.227]    [Pg.179]   


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