Environmental aspects of planarization processes

CMP slurries are formulated with a combination of abrasive particles and chemical additives as summarized in Table 10.1. The additives are selected for their ability to stabilize the abrasive particle dispersions, and optimize the selective removal of the materials targeted by a particular CMP operation. With few exceptions, the abrasive particles used in commercial CMP slurries for semiconductor applications are comprised of alumina, ceria, or amorphous silica (Al203 Ce02, Si02). Depending on the particular application, the abrasive particle sizes in CMP slurries may typically vary over a range from approximately 20 to 200 nm. Particles and/or agglomerates of 

Advances in Chemical Mechanical Planarization (CMP). http //dx.doi.Org/10.1016/B978-0-08-100165-3.00010-3 

Abrasive particle AI2O3, Ce02, amorphous Si02  

Complexing agent Solubilize dissolved metals Amino acids (glycine, etc.), carboxylic acids (citric acid, etc.) America and Babu (2004), Gopal et al. (2006) 

Oxidizer Promote metal removal via oxidative dissolution H2O2, ferric nitrate, KIO4, KMn04, etc. Krishnan et al. (2010) 

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