Ellipsometry simulation calculations

Plasma analysis is essential in order to compare plasma parameters with simulated or calculated parameters. From the optical emission of the plasma one may infer pathways of chemical reactions in the plasma. Electrical measurements with electrostatic probes are able to verify the electrical properties of the plasma. Further, mass spectrometry on neutrals, radicals, and ions, either present in or coming out of the plasma, will elucidate even more of the chemistry involved, and will shed at least some light on the relation between plasma and material properties. Together with ellipsometry experiments, all these plasma analysis techniques provide a basis for the model of deposition. 

Ellipsometry. Layer thickness of GPS, PS, FPS and FSI on the flat silica wafers was evaluated at k = 633 nm and an angle of incidence of 70° with a SENTECH SE-402 microfocus null ellipsometer (lateral resolution is defined by the beam spot of about 20 pm). The measurements were performed for each sample after each step of modification to use the data of the previous step as a reference for the simulation of ellipsometric data. Initially, the thickness of the native SiC>2 layer (usually 1.4 0.2nm) is calculated at refractive indices n = 3.858 — iO.Ol8 and n = 1.4598... 

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