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Ellipsometry, resist development

Optical Exposure. Multicomponent LB films were prepared from solutions of novolac/PAC varying in concentration from 5-50 wt% PAC, and transferred at 2.5 -10 dyn/cm. The films were composed of 15 - 20 monolayers, with an average film thickness of 30 nm, as measured by ellipsometry. Exposures were performed with a Canon FP-141 4 1 stepper (primarily g-line exposure) at an exposure setting of 5.2 and with a fine line test reticle that contains line/space patterns from 20 to 1 pm (40 to 2 pm pitch). They then were then developed in 0.1 - 0.2 M KOH, depending on the PAC content The wafers received a 20 min 120°C post development bake to improve adhesion to the Cr. Finally, the Cr was etched in Cyantek CR-14 chromium etchant, and the resist and Cr images were examined by SEM. [Pg.352]

Several factors have contributed to this goal in the recent past development of electrochemical techniques for the study of complex reactions at solid electrodes, use of physical methods such as ESCA, Auger, LEED, etc. for the study of surfaces in the ultrahigh vacuum (UHV) environment and in situ techniques under the same conditions as the electrode reaction. Ellipsometry, electroreflectance, Mossbauer, enhanced Raman, infrared, electron spin resonance (ESR) spectroscopies and measurement of surface resistance and local changes of pH at surfaces were incorporated to the study of electrode kinetics. [Pg.66]

Refractive indices (n) and film thicknesses of not only resist films but also underlying layers and topcoats are important parameters when developing a lithography process. Ellipsometers are employed to measure accurately film thickness, refractive index, and extinction coefficient (k) in a wide range of wavelength. The spectroscopic ellipsometry has been extended to 157 nm [504]. [Pg.211]

In situ FTIR " also had to overcome serious difficulties in its application to electrochemical problems. Unlike ellipsometry, where the wavelengths used are in a region of low solvent absorbance, IR is strongly absorbed by most familiar organic solvents and most particularly by water. This leads inevitably either to thin-layer cells or the development of internal reflection techniques. The former has the advantage of simplicity in interpreting spectral data, but it severely limits the type of electrochemistry that can be carried out. The latter requires not only a suitable high-refractive index substrate, such as Ge or Si, but also an adherent very thin layer of metal as the electrode. Technically this is difficult to fabricate so that the metal layer is continuous, and a substantial lateral resistance is inevitable. [Pg.134]


See other pages where Ellipsometry, resist development is mentioned: [Pg.340]    [Pg.181]    [Pg.12]   


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