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Electron mobility growth condition dependence

The (photo)conductivity of ZnSe depends strongly on the growth conditions, dopants, doping characteristics, etc. In undoped material, values of the electrical resistivity between 10 and a few cmhave been found. Values of the electron mobility at room temperature reach up to 400cm /V s for the hole mobility, fj,p = llOcm /V s has been calculated as an upper limit. [Pg.671]

See other pages where Electron mobility growth condition dependence is mentioned: [Pg.400]    [Pg.420]    [Pg.671]    [Pg.114]    [Pg.455]    [Pg.440]    [Pg.401]    [Pg.652]    [Pg.107]    [Pg.67]    [Pg.70]    [Pg.652]    [Pg.129]    [Pg.674]   
See also in sourсe #XX -- [ Pg.131 ]



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Electron dependence

Growth conditions

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