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Electron-beam patterning

Otlier lithographical means include micromachining [175], photopatteming [176] or electron beam patterning [1771, which have been demonstrated on alkanetliiolate/Au SAMs, alkanetliiolate and organo-siloxane on Si and Ti and alkanetliiolates on GaAs. [Pg.2626]

Cyclic RGDfK PEG Mouse osteoblasts and melanocytes, rat fibroblasts Electron beam patterning of nanopattemed Au-nanodots on PEGmodified substrates, backfill with peptide (with lysine anchor group) 2004 [149]... [Pg.70]

Pesen D, Heinz WF, Werbin JL et al (2007) Electron beam patterning of fibronectin nanodots that support focal adhesion formation. Soft Matter 3 1280-1284... [Pg.75]

Kozawa T, Saeki A, Yoshida Y, Tagawa S. (2002) Study on radiation-induced reaction in microscopic region for basic understanding of electron beam patterning in lithographic process (1) development of subpicosecond pulse radiolysis and relation between space resolution and radiation-induced reactions of onium salt. Jpn J Appl Phys 41 4208-4212. [Pg.158]

Other lithographical means include micromachining [175], photopatteming [176] or electron beam patterning... [Pg.2626]

An electron beam patterning was abo performed on plasmapcdymerized CuAA films [117-118]. Morita and Hattori [97] described a dry litogiaphy inocess involving an X-ray mask formed by gold-doped plasma polymerization of dyrraie. [Pg.93]

Direct Electron-Beam Patterning of CP Thin Films... [Pg.413]

Harnett CK, Coates GW, Craighead HG (2001) Heat-Depoly-mmzable Polycarbonates as Electron Beam Patternable Sacrificial Layers for Nanolluidics. 1 Vac Sci Technol B 19 2842-2845... [Pg.1414]

Figure 13 Pattern rectification using PS-/J-PMMA on the chemicai pattern, (a) SEM images of hoie arrays (pitch = 27 nm) in developed electron-beam resist, (b) SEM images of hoie arrays (pitch = 27 nm) from PS-f -PMMA on the chemicai patterns from (a), (c) Hole size distribution in electron-beam pattern and block copolymer. Figure 13 Pattern rectification using PS-/J-PMMA on the chemicai pattern, (a) SEM images of hoie arrays (pitch = 27 nm) in developed electron-beam resist, (b) SEM images of hoie arrays (pitch = 27 nm) from PS-f -PMMA on the chemicai patterns from (a), (c) Hole size distribution in electron-beam pattern and block copolymer.
See other pages where Electron-beam patterning is mentioned: [Pg.62]    [Pg.336]    [Pg.137]    [Pg.86]    [Pg.12]    [Pg.405]    [Pg.943]    [Pg.624]    [Pg.742]    [Pg.1437]    [Pg.388]    [Pg.177]    [Pg.967]    [Pg.968]    [Pg.322]    [Pg.21]    [Pg.29]   
See also in sourсe #XX -- [ Pg.93 ]



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Electron beam

Electron pattern

Electron-beam patterning resolution

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