Electrical performance of WSix in devices

Good results have been reported [Saraswat et al.225, Deal et al.227, Trammel228, Metz228] for CVD-WSix-polycide MOS devices. Even in the case where there was no poly-Si and thus the silicide was in direct contact with the gate oxide, very low levels of fixed oxide charge and interface traps were present. It is interesting how the workfunction found for polycide MOS 

It should be noted that when gate oxides thicknesses become thinner and poly-Si line widths become narrower, certain problems emerge for SiH4 based CVD-WSix. For more details see section 9.6. 

WSix has also been used as a direct wiring material between n+-Si and p+-Si. Excellent contact resistances were reported 3xl0 7 Hem2 (n+) 2xl0 7 flcm2 (p+) and lxlO 7 Clem2 for phosphorous doped poly-Si [Mihara et al.215]. 

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