Electrical circuits depletion region

A typical EBIC experiment is shown schematically in Fig. 10. A Schottky barrier is formed between a semiconductor and a metal. An electron beam impinges through the metal and creates electron hole pairs in the depletion region of the semiconductor. The charge carriers are separated by the electric field in the space charge region and are detected as collected current Ic in the external circuit. In the presence of recom-... 

Inside the silicon semiconductor, electrons diffuse from the n-type side (with a high electron concentration) in the direction of thep-type side. Holes diffuse from the p-side in the opposite direction. This results in a region where all charge carriers are depleted (space charge region). At thep-n junction both electrons and holes accumulate electrons on one side of the junction, and holes at the other side. Thus, a double layer of electric charges is formed, which leads to a potential difference of about 0.6-0.7 V. This is the solar cell s open-circuit voltage (OCV). When both sides of the... 

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