Electric-field-induced resistive switching

Tungsten offers high degree of compatibility and ease of processing of the integrated circuit when WO is used as active material in RRAM. 

With a further increase in thickness ( 25 nm), the switching direction is reversed (sohd curves). While sweeping the voltage in a positive direction ( 1.2 V), the device switched into a LRS and the reset operation was carried out by applying a negative bias (—IV). The sweeping voltage was in the sequence 0 Vmax 0 - Vmax 0, and exhibited counterclockwise 

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