Effects of Deposition Conditions on Diamond Nucleation

Haq et al.P l presented the time evolution of diamond nucleation on Si(lOO) in MW PACVD, as shown in Fig, 1. The effect of substrate temperature on the nucleation processes is evident in the figure. For each substrate temperature, the nucleation density increases drastically after the incubation period, and then rapidly attains its saturation level. For substrate temperatures less than 816°C, higher substrate temperatures lead to shorter incubation periods, higher nucleation rates and higher nucleation densities. 

Kim et studied the effects of deposition conditions on diamond nucleation on Si substrates ultrasonically pretreated with SiC powder. Their HF C VD experiments reveal that the nucleation rate increased with increasing substrate temperatures up to 900°C, reached a maximum at a substrate temperature aroimd 950°C, and then decreased with further increase in substrate temperatures. 

These results reveal that an optimum substrate temperature exists around 860°C, at which a maximum nucleation density can be achieved. 

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