Effective Rydberg donors

Table 5.1. Binding energies of the first EM even-parity donor states for 7 < 1 in effective Rydberg units [13]...

Table 5.3 gives a semi-empirical value of the effective Rydberg R ood for EM donors in 3C-SiC. It is the ratio of the experimental 3p i — 2p i spacing of the Nc spectrum obtained from Table 6.10 to the same spacing in atomic units, obtained by a linear interpolation of the calculated energy levels of Table 5.2 for 71/3 = 0.7181. This value of R ood (34.85 meV) is used to calculate the energies of the other donor levels by the same interpolation method. The first two rows of Table 6.10 gives the experimental positions of the lines attributed to Nc and to the EMD centre in 3C-SiC by Moore et al. [170]. The calculated... 

With m in units of me, 7b = 4.2544 x 10 fi ( s/m )2 B(T). For shallow donors in multi-valley semiconductors, to is the electron transverse effective mass mnt of Table 3.4 and for QHDs in direct-band-gap semiconductors, it is the effective mass mn at the T minimum of the CB of Table 3.6. For the shallow acceptors where the effective Rydberg R oa is defined as Roo/li, Bo is equal to Rloa/jips- Values of Bo for shallow donors and acceptors in different semiconductors are given in Table 8.12. 

Fig. 2.23. Example of a Rydberg series whose energy splittings are determined by solid state effects the absorption spectrum of P as a donor impurity in Si (courtesy of R.A. Stradling).

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