Recombination energy effective

This observed pattern of charge transfer and switching processes is consistent with the vertical-transition model (Franck-Condon principle) as discussed by Bearman et al. (1976), who interpreted the cross sections for ionic excitation in low-energy charge-transfer collision between HeJ and some diatomic neutrals. In analogy to that, in the cases of KrJ reactions, it is not the total recombination energy RE(KrJ) = 12.85 eV that is available, but only the effective recombination energy Reeff(KrJ) = 11.91 eV, which is determined, as shown in Fig. 6, by the vertical transition from KrJ to the repulsive state of JCr-Kr at the equilibrium distance f o(Kr2 ) ... 

Fig. 9. Breakdown pattern for propane QET calculation, solid line measurments ( ), C3H (A), CjHj ( ), C3HJ (T), C2H ( ), C2H4 (x), C2H3. Symbols are present chaige-exchange results from projectile ions with (effective) recombination energies REefi(Kr )= 11.9eV, RE(Xe+)=12.13eV, REen(N+)= 12.9eV, REe (Arf)= 13.7eV, RE(Kr+)= l4.00eV, RE(CO+) = 14.01 ey RE(NJ)= 15.6eV, RE(Ar+)= l5.82eV (Praxmarer e/a/., 1998).

In Table II, effective recombination energies are given for some doubly charged ions. 

Table II. Spectroscopic Recombination Energies RE and Effective Recombination Energies RE of Doubly Charged Positive Ions (in eV) ...

It is important to emphasize that the photocatalytic reactivity of the metal ion-implanted titanium oxides under UV light (X < 380 nm) retained the same photocatalytic efficiency as the unimplanted original pure titanium oxides under the same UV light irradiation conditions. When metal ions were chemically doped into the titanium oxide photocatalyst, the photocatalytic efficiency decreased dramatically under UV irradiation due to the effective recombination of the photo-formed electrons and holes through the impurity energy levels formed by the doped metal ions within the band gap of the photocatalyst (in the case of Fig. 6)... 

The following discussion concentrates on the creation of bulk dangling bond defects, which may not be the only process, but is almost certainly the dominant one. Dersch, Stuke and Beichler (1980) were the first to show that illumination causes an increase in the g = 2.0055 paramagnetic defect and concluded that the Staebler-Wronski effect was the creation of dangling bonds. The metastable defect creation and annealing is described by the potential well model shown in Fig. 6.1, except that the barrier is overcome by the recombination energy from... 

In Si crystals subjected to heat-treatments after irradiation with high energy (>2 MeV) particles or to irradiations at elevated temperatures (500-800 K), the formation of complex defect-impurity clusters have been established [1,2]. They are highly thermostable. Such clusters can cause significant changes in electrical and optical properties of the irradiated materials and devices, and, in particular, they can serve as effective recombination centers for minority charge carriers in high-speed Si-based devices. 

The main problem with the use of metallic layers in direct contact to the absorber lies in the large density of states near the Fermi energy in metals. The proximity of this large density of states opens a very effective recombination channel that often precludes a reasonable quantum efficiency. When the metal contacts are separated from the absorber by a transparent, majority-carrier transport layer, the recombination problem can be avoided and much better efficiencies can be expected. 

A "diatomic model for radical-radical recombination seems to be a good approximation as well. Therefore, lor such reactions the maximum of the effective potential energy (8.IV), including a centrifugal potential, allows us to define a transition state (or "activated complex). This provides the possibility for an application of either the colli-sional or statistical formulations of the theory of chemical reaction rates these formulations will be compared in the following sections. 

For atom-atom recombination reactions there exists no difficulty for a separation of the angular momentum p in a classical consideration, already made in Sec.3.II. Using the "diatomic"model, this consideration may be extended to radical-radical recombination where the interaction at large separation is mainly due to dispersion forces hence, the attractive potential has the form (32.IV) and the effective potential energy (56.11) (with r = x) becomes... 

The table below lists the ion product distributions and reaction rate constants k at 300 K obtained from SIFT measurements. The reactants are in the order of decreasing proton affinity Ap(the proton detachment energy via PHJ PH + H+ amounts to 160.2 kcal/mol see above). The ionization potentials Ej of the reactants are also given (the recombination energy via PHJ+e - PH2 amounts to 9.82 eV see p. 61). k is given in cm molecule" s for ternary association reactions, it represents an effective binary rate constant at an He pressure of 0.48 Torr [2] ... 

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