DSSC/CIGS cells

Figure 8.9 Photocurrent density-voltage characteristics under AM 1.5 full sunlight (1000 mW cm O for a two-terminal tandem DSSC/CIGS cell. The DSSC top cell produced 4c = 13.66 mA cm Voc = 0.8 V FF = 0.75 and >] = 8.2%, while the CIGS bottom cell produced 4c = 14.3 mA cm Lx = 0.65 V and FF = 0.77 and >] = 7.28%. The DSSC/CIGS tandem cell produced / = 14.05 mA cm Loc = 1-45 V FF = 0.74 and >1 = 15.09%. The reverse-bias characteristics are shown as a black curve. Adapted from Liska et al (2006).

Figure 3.99 Photocurrent density-voltage characteristics under AM 1.5 full sunlight (100 mW cm ) for a two-wire tandem DSSC/CIGS cell, (a) J-V curve for the DSSC top cell, (b) J-V curve for the CIGS bottom cell and (c) J-V curve for the two-terminal DSSC/CIGS tandem cell. Reprinted with permission from Liska et al., 2006 °. Copyright (2006) American Institute of Physics.

The conversion efficiency of the monolithic device, tj = 12.2%, slightly exceeded the performance of the CIGS cell (11.6%), but was a little lower than the stacked cell described above. The Voc of the tandem device was close to the sum of the VqcS of the individual DSSC and CIGS cells, confirming the series connection of the subcells. The device suffered from electric shunts and the performance of the device ( Vqc FF) degraded... 

The thin-film materials that are discussed in this chapter can be used in depositing one or more thin layers of material on a substrate in the following PV cell technologies (i) CdTe, (ii) copper indium (galUum) selenide (CIS or CIGS), and (iii) Dye-sensitized solar cell (DSSC). The thickness of such layers can vary from a few nanometers to tens of micrometers. 

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