Drift ISFET materials

Arnoux, C., Buser, R., Decroux, M., Van den Vlekkert, H. H., De Rooij, N. F. Analysis of the Stracture and Drift of AljOj Layers Used as a pH-Sensitive Material For pH-ISFETs , Proc. 4th International Cottference on Solid-State Sensors and Actuators fThmsducers 87), Tokyo, Japan, June 2-S, 1987. pp. 751-754. 

Ti was also used as a dopant in different materials such as Gd203 (as Gd2Ti05) in order to develop a pH-sensing membrane for ISFETs. This doping improves the crystalline structure of materials which results in fabricating a highly sensitive, selective, and a low drift pH-sensing system. 

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