Doped-semiconductor diamond deposition

The plasma jet can be cooled rapidly prior to impact on the substrate surface by mixing with a cold inert gas fed into an annular fixture. Gaseous boron or phosphorous compounds can be introduced into the gas feed for the deposition of doped semiconductor diamond,... 

The development of low-pressure synthesis methods for diamond, such as the chemical vapor deposition (CVD) technique, has generated enormous and increasing interest and has extended the scope of diamond applications. Highly efficient methods have been developed for the economical growth of polycrystalline diamond films on non diamond substrates. Moreover, these methods allow the controlled incorporation of an impurity such as boron into diamond, which in this case forms a ptype semiconductor. By doping the diamond with a high concentration of boron (B/C = O.Ol), conductivity can be increased, and semi-metallic behavior can be obtained, resulting in a new type of electrode material with all of the unique properties of diamond, such as hardness, optical transparency, thermal conductivity and chemical inertness [1,2]. 

Diamondlike Carbon and Hard Carbon-Based Sensors Sensors that are based upon diamond technology include thermistors, pressure and flow sensors, radiation detectors, and surface acoustic wave devices [103]. The relative ease of depositing prepattemed, dielectrically isolated insulating and. semiconducting (boron-doped p type) diamond films has made polycrystalline diamond-based sensors low-cost alternatives to those based on conventional semiconductors. Diamondlike carbon and diamond films synthesized by chemical... 

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