Donor binding energies

First, as the donor binding energy decreases from Fe1 to Zn1, the electronic mixing, expressed in the dependence of rate on distance k exp-(oR) should change. In tl simplest barrier tunneling theory a s (IP. - IP. . ) For this theory, then,... 

Another feature clearly observed in FIGURE 1 is the sharp transition on the low energy side of the I2 line and labelled I2 (n = 2). It is interpreted as a two electron satellite of the donor bound exciton line, i.e. due to a recombination where the donor is left in its n = 2 excited state [6,19], From the 22 0.5 meV separation from the I2 line, a donor binding energy of 29 1 meV can be deduced [6,19], The weak transitions in FIGURE 1 at 3.27 and 3.18 eV, attributed to donor-acceptor pair recombinations, are discussed below. 

The Poole-Frenkel coefficient j3 is larger than of Eq. (5.65) because in contrast to the image charge, the charge of the donor remains of course fixed in space. Lowering of the donor binding energy by 6E leads to Eq. (5.67). 

Fig. 108. Donor binding energy of the bound magnetic polaron vs. temperature at various magnetic fields as calculated from experimentally determined d.c. resistivity of Eu-rich EuSe with nc(297 K) = 7.8x10 cm". ...

JA Freitas Jr, SG Bishop, PER Nordquist Jr, ML Gipe. Donor binding energies determined from temperature dependence of photoluminescence spectra in undoped and aluniinum-doped beta SiC films. Appl Phys Lett 52 1695, 1988. 

Figure 3.11 10 K PL spectrum for a forming gas-annealed ZnO substrate in the TES region of the main bound exciton lines. Inset shows the exciton binding energy versus donor binding energy. (After Ref [50]).

PL line Chemical identity [75] Energy (eV) (Donor binding energy, meV) ... 

Figure 4.2 Exciton localization energies versus the respective donor binding energies (Haynes plot) for bulk ZnO. The solid line is a fit to Equation 4.2 with 0 = —3.8 eV and b = 0.365. (After Refs [55, 56].)...

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