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Diamond surface diagrams

Fig. 5.2-2 (a) Surface diagrams face-centered cubic (fee) positions given in terms of a/2 [2.2] (b) Surface diagrams body-centered cubic (bcc) positions given in terms of a/2 [2.2] (c) Surface diagrams diamond, GaAs (positions given in terms of a/2) Ga atoms are denoted by unprimed symbols As atoms by primed symbols and shaded circles [2.2]... [Pg.981]

Fig.5.2-2c Surface diagrams diamond, GaAs (positions given in terms of a/2) Ga atoms are denoted by unprimed symbols. As atoms by primed symbols and shaded circles [2.2]... Fig.5.2-2c Surface diagrams diamond, GaAs (positions given in terms of a/2) Ga atoms are denoted by unprimed symbols. As atoms by primed symbols and shaded circles [2.2]...
A schematic diagram of the procedure for fabricating the BDD-MDA electrode is shown in Fig. 11.1. A Si(lOO) surface was masked with patterned photoresist and etched with a mixture of HF, HNO3 and H2O. The structured silicon surface was seeded with 10-nm diamond powder. BDD was deposited using a microwave plasma-assisted chemical vapor deposition system. The details of the diamond deposition have been reported elsewhere [7]. After the deposition of diamond, polyimide varnish was spin-coated on the diamond surface. The polyimide layer was... [Pg.239]

An interesting application of this method is the preparation of diamond films which may be obtained from a precursor such as CH4, C2H2 and H2 activated by heating, microwaves, etc. typically at 600-1000°C at a reduced pressure. The direct deposition from the gas to the surface results in the formation of metastable diamond whereas, according to the phase diagram (see Fig. 5.37), the production of stable bulk diamond requires very high pressure and temperature. Kinetically, the... [Pg.583]

Fig. 9. Phase diagram ofthe thin film with surface parameters p O.2, g=-0.5 plotted in the plane of variables % 1, for polymers of chain length N=100 and for three choices of film thicknesses D=20 (diamonds), D=60 (crosses) and D=100 (squares). Broken curve shows the bulk phase diagram of the underlying Flory-Huggins model for comparison. Remember that lengths are measured in units of the size b of an effective monomer. From Flebbe et al. [58]... Fig. 9. Phase diagram ofthe thin film with surface parameters p O.2, g=-0.5 plotted in the plane of variables % 1, for polymers of chain length N=100 and for three choices of film thicknesses D=20 (diamonds), D=60 (crosses) and D=100 (squares). Broken curve shows the bulk phase diagram of the underlying Flory-Huggins model for comparison. Remember that lengths are measured in units of the size b of an effective monomer. From Flebbe et al. [58]...
The surface energies of (100), (111), and (110) of diamond in a plasma environment (in the presence of H atoms and at high temperature) were evaluated using simple assumptions and an equation [98]. In the surface energy versus 7 diagram for... [Pg.48]

Figure 7. Schematic diagram showing the proposed nucleation mechanism diamond nuclei form on a DLC interlayer. (I) Formation of carbon clusters on substrate surface and change in bonding structure from sp to sp. (II) Conversion of sp sp bonding. Figure 7. Schematic diagram showing the proposed nucleation mechanism diamond nuclei form on a DLC interlayer. (I) Formation of carbon clusters on substrate surface and change in bonding structure from sp to sp. (II) Conversion of sp sp bonding.
Figure 9. Schematic diagram showing the proposed nucleation mechanism diamond nuclei form on a carbide interlayer on a carbide-forming refractory metal substrateJ Initially, carburization consumes all available C to form a carbide surface layer. A minimum C surface concentration required for diamond nucleation cannot be reached on the substrate surface. With increasing carbide layer thickness, the C transport rate stows and the C surface concentration increases. When the C surface concentration reaches a critical level for diamond nucleation, or a surface C cluster attains a critical size, a diamond nucleus forms. (Reproduced with permission.)... Figure 9. Schematic diagram showing the proposed nucleation mechanism diamond nuclei form on a carbide interlayer on a carbide-forming refractory metal substrateJ Initially, carburization consumes all available C to form a carbide surface layer. A minimum C surface concentration required for diamond nucleation cannot be reached on the substrate surface. With increasing carbide layer thickness, the C transport rate stows and the C surface concentration increases. When the C surface concentration reaches a critical level for diamond nucleation, or a surface C cluster attains a critical size, a diamond nucleus forms. (Reproduced with permission.)...
Figure 8. Schematic diagram showing the mechanisms of diamond nucleation enhancement on biased substrates, (a) Negative biasing carbon-containing cations are accelerated toward the substrate surface, (b) Positive biasing electrons are accelerated toward the substrate surface and bombard carbon-containing molecules adsorbed on the surface. (Reproduced with permission.)... Figure 8. Schematic diagram showing the mechanisms of diamond nucleation enhancement on biased substrates, (a) Negative biasing carbon-containing cations are accelerated toward the substrate surface, (b) Positive biasing electrons are accelerated toward the substrate surface and bombard carbon-containing molecules adsorbed on the surface. (Reproduced with permission.)...
Figure 5.2-2 gives diagrams of ideal surfaces for some common faces of the fee (face-centered cubic), bcc (body-centered cubic), diamond, and zinc blende systems, as well as the coordinates of the atoms of the... [Pg.979]

Figure 15 (a) Phase diagram of a binary polymer blend N= 32) as obtained from Monte Carlo simulations of the bond fluctuation model. The upper curve shows the binodais in the infinite system the middle one corresponds to a thin film of thickness D=2.8/ e and symmetric boundary fields [wall = 0.16, both of which prefer species A (capillary condensation). The lower curve corresponds to a thin film with antisymmetric surfaces (interface localization/delocalization). The arrow marks the location of the wetting transition. Full circles mark critical points open circles/dashed line denotes the triple point, (b) Coexistence curves in the (T, A/y)-plane. Circles mark critical points, and the diamond indicates the location of the wetting transition temperature. It is indistinguishable from the temperature of the triple point. Adapted from Muller, M. Binder, K. Phys. Rev. 2001, 63, 021602. ... [Pg.409]

FIGURE 1.6 Phase diagram for the proposed free energy surfaces is shown. Reduced temperature is defined as TIT. The lines with square symbols indicate the gas-liquid coexistence, the lines with diamond symbol indicate the coexistence between fluid and stable solid, the lines with circles indieate the eoexistence between fluid and metastable solid and, the lines with upright triangles indieate the coexistence between metastable solid and stable solid. [Pg.14]


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See also in sourсe #XX -- [ Pg.983 ]

See also in sourсe #XX -- [ Pg.983 ]




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