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Design of Oxide Semiconductors

In the past several years noble metal loading, ion doping, composite metal-oxide semiconductors, and multi-component semiconductors have been meticulously designed, fabricated, and then investigated [Pg.387]

Design of Selective Gas Sensors Using Combinatorial Solution Deposition of Oxide Semiconductor Films... [Pg.295]

Oxide semiconductor nanoparticles such as ZnO were surface-modified by Dutta et al. using a different approach [76]. They described the design and fabrication of... [Pg.254]

Abstract This review highlights how molecular Zintl compounds can be used to create new materials with a variety of novel opto-electronic and gas absorption properties. The generality of the synthetic approach described in this chapter on coupling various group-IV Zintl clusters provides an important tool for the design of new kinds of periodically ordered mesoporous semiconductors with tunable chemical and physical properties. We illustrate the potential of Zintl compounds to produce highly porous non-oxidic semiconductors, and we also cover the recent advances in the development of mesoporous elemental-based, metal-chalcogenide, and binary intermetallic alloy materials. The principles behind this approach and some perspectives for application of the derived materials are discussed. [Pg.133]

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Oxide semiconductors

Semiconductor oxidic

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