Depth Profiling by TXRF and Multilayer Structures

Buried layers are important parts of microcircuits. TXRF is a sensitive microanalyti-cal tool for inspection of buried layers (Fig. 4.14). On a thick substrate, the angle characteristics are a function of layer thickness. [4.59, 4.60]. 

Recently, first-principle calculations have been reported on model-free TXRF of stratified structures [4.61]. 

Shallow doping profiles, particularly those of As, require nanoscale information on dopant distribution. Although SIMS can be reliably applied for layers below 5 nm 

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