Deposition of Thin Dielectric Films

This section deals with the application of the techniques described above to one of the most important problems for current microelectronics, namely the epitaxial growth of a thin high-k dielectric film on a silicon surface. For a 

Molecular Dynamics Modeling of Precursor Interaction With 

To estimate the relaxation time of the adsorbed complex, MD modeling of ZrCl4 adsorption on the hydroxylated Zr02 surface was performed. The 

A periodic model of the zirconia surface was used in MD modeling. It consisted of 2 x 2 elementary Zr02 cells, and ZrCl4 precursors incident perpendicular to the surface. The Zr02 surface was connected with a thermostat with a temperature of 600 K, and the initial velocities of the ZrCl4 precursor corresponded to a temperature of 600 K. 

Kinetic Mechanism of Zirconium and Hafnium Oxide Film 

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