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Defects electroluminescence devices

Unlike thin film transistors, electroluminescence devices operate in a high electric field, and therefore homogeneity and low defect density of the thin films are more important than the carrier transport characteristics. In this sense, the approach to the use of nematic semiconductors by Kelly and O Neill should be reasonable. [Pg.172]

Thin film electroluminescent (TFEL) materials are similar to LEDs, in that they are completely soUd-state materials. The difference lies in the application of charge and a higher level of defects. Therefore, TFEL devices require a much higher electrical field than the injection electroluminescence observed in LEDs. However, devices in this category typically possess the possibility of multicolor emission. Mach provides a review similar to that of DenBaars on the application, construction, and properties of various materials in this application. [Pg.6306]


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See also in sourсe #XX -- [ Pg.285 ]




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