Defect States Spectroscopy in Amorphous Semiconductors

2 The Principle of Detailed Balance and Classification of Trapping States 2 

Amorphous semiconductors are characterized by properties that are absent in their crystalline counterparts. On the one hand, they are unsuitable objects both for experimentalists and from the theoretical point of view on the other hand, they have widespread technical applications. Therefore, trap level spectroscopy in materials containing S, Se, and Te is necessary for further technical applications. Currently, there is no universal technique that probes the full spectrum of trapping levels in a mobility gap experimentalists use several complementary methods. This book is devoted to techniques that probe states in the mobility gap and the results of their use. 

The book is an encyclopedia in the sense that it gives starting information about a wide range of spectroscopic techniques in disordered materials. The author only provides brief, annotated descriptions of these techniques, their advantages, and experimental results that are typical for the objects considered. 

Trap Level Spectroscopy in Amorphous Semiconductors. DOI 10.1016/B978-0-12-384715-7.00001-2 

Copyright 2010 by Elsevier Inc, All rights of reproduction in any form reserved, 

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