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Deep levels experimental characterization, 7-30,

Graphical techniques based on application of an Arrhenius relationship are illustrated here for an -GaAs single crystal diode with a Ti Schottky contact and a Au, Ge, Ni Schottky contact at the eutectic composition. This material has been well characterized in the literature and, in particular, has a well-known EL2 deep-level state that lies 0.83 to 0.85 eV below the conduction band edge. Experimental details are provided by Jansen et... [Pg.357]

See other pages where Deep levels experimental characterization, 7-30, is mentioned: [Pg.1]    [Pg.4]    [Pg.7]    [Pg.7]    [Pg.106]    [Pg.450]    [Pg.831]    [Pg.34]    [Pg.14]    [Pg.481]    [Pg.165]    [Pg.120]    [Pg.253]    [Pg.37]    [Pg.101]    [Pg.111]   


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Deep levels

Experimental Characterization of Deep Levels

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