CVD of HTS Lattice-Matched Metal Oxides

The development of film growth processes for large scale multilayer HTS device technologies is crucially dependent not only upon the ability to fabricate large area HTS metal oxide films, but also on the ability to reliably grow HTS lattice-matched, CTE-matched, chemically compatible, low E/tan d metal oxides for use as dielectrics, buffers, substrates, interlayers, and overlayers [282]. (See Fig. 2-11 for an illustration of a complex HTS device). MOCVD processes appear to offer advantages that could be employed to this end, provided that reliable routes to dielectric films can be established. Films of many of the aforementioned lattice-matched metal oxide substrate and/or interlayer materials (Table 2-3) have been grown by MOCVD (see below). 

MOCVD-derived buffer layers can serve as templates for the growth of high-quality HTS films. 

SPIE Proc. 1989, 7787, 104-114. 

Dahmcn.T. Gerfin, Prog. Crystal Growth and Charact. 1993, 27, 117-161. 

Conumtn. Phys. Lab. Univ. Leiden 1911, No. 120b. 

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