Current-voltage characteristic device

The first realization of a conjugated polymer/fullerene diode [89] was achieved only recently after the detection of the ultrafasl phoioinduced electron transfer for an lTO/MEH-PPV/CW)/Au system. The device is shown in Figure 15-18. Figure 15-19 shows the current-voltage characteristics of such a bilayer in the dark at room temperature. The devices discussed in the following section typically had a thickness of 100 nm for the MEH-PPV as well as the fullerene layer. Positive bias is defined as positive voltage applied to the 1TO contact. The exponential current tum-on at 0.5 V in forward bias is clearly observable. The rectification ratio at 2 V is approximately l()4. 

Fig. 11.4. Logarithmic amplifier, (a) Schematic of a logarithmic amplifier. A diode is used as the feedback element in a current amplifier. The current-voltage characteristics are exponential. The output voltage is then proportional to the logarithm of the input current, (b) The transfer curve of a typical logarithmic amplifier, AD757N from Analog Devices. The reference current is internally set to be 10 p,A. It is accurate up to six decades.

Fig. 8. Current-voltage characteristics of two hypothetical devices of identical physical size. The gallium arsenide curve rises faster and reaches peak velocity faster than the silicon. This means that the group III-V (13-15) electrons produce significantly faster operating times in microchips. (AT T Technology)...

Experimental current-voltage characteristic of a pumping cell having the structure shown in Fig. 3b for two different O2 concentrations in N2. The temperature of the device was 750 C. 

The current-voltage characteristics of the ITO/polymer 22 and 23/C60/Al devices under illumination with simulated solar light (100 mW/cm2). 

FIGURE 7. Current-voltage characteristic of the device ITO/PEDOT PSS/polymer 30 PCBM/A1 under illumination with simulated AM 1.5 solar light. 

As the structures and current-voltage characteristic of OFETs have been well described in many other articles [8-13], herein we only give a very simple introduction on the basics of phthalocyanine-based OFET devices. 

Fig. 3 Schematic diagram of current-voltage characteristics of (a) p-type, (b) n-type, and (c) ambipolar OFET device...

In this section we discuss a method of controlled material degradation for individual organic semiconductors and also for the blends used in bulk heterojunction solar cells [37]. The degradation is studied using attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) and by determining current/voltage characteristics (I/V measurements) of the devices. 

IV. Static Current-Voltage Characteristics of Virgin Devices... 

Fig. 2. (a) Static current-voltage characteristics of a virgin (unformed) p+-n-i device. The positive quadrant corresponds to a positive bias applied to thep+ layer, (b) The data for 30°C in (a) plotted in the form of log conductivity versus voltage and illustrating the change from ohmic to nonohmic behavior. 

Fig. 3. Current-voltage characteristics of a device in the ON state, at different temperatures, in the forward and reverse directions. The forward direction corresponds to p+ layer positively biased. ( ) forward bias, 80°C (A) forward bias, 30 C (O) reverse bias, 80°C (A) reverse bias, 30 C.

Fig. 4. Complete static current-voltage characteristics of a formed a-Si p+-n-i device, showing the forward and reverse threshold voltages, Vand respectively.

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