Crystallography of interphase boundaries

A more detailed study of the crystallography of SiC-Si3N4 interphase boundaries was undertaken by Turan and Knowles (2000). The composites that they investigated containing either 10 or 20 wt% Si3N4, with the balance SiC. Composites were prepared by hot isostatic pressing. Two different types 

Clear orientation relationships were also seen by Turan and Knowles (1997) for interfaces between / -BN and (3-Si3N4 (Fig. 17.6). As for interfaces between 7 -BN and SiC, interphase boundaries were dominated by (0001) 

5 (a) A b-BN particle sandwiched between 3C SiC and 6H SiC grains in a Si3N4-SiC composite made using as-received powders. 

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Turan, S. and Knowles, K.M., (2000), The crystallography of interphase boundaries between silicon carbide and silicon nitride in silicon nitride-silicon carbide particulate composites , Interface Science, 8 (2/3), 279-294. 

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