Crystal miscut

The dynamics of upd reactions have also been examined by STM. The formation of the ordered copper/sulfate layer [354] and copper chloride layer [355] on Au(lll) was examined in a dilute solution of Cu where the reaction was under diffusion control so that growth proceeded on a time scale compatible with STM measurements [354]. In another study, the importance of step density on nucleation was examined and the voltammetric and chronoamperometric response for Cu upd on vicinal Au(lll) was shown to be a sensitive function of the crystal miscut, as... 

Further experimentation under controlled conditions of saturation and crystal miscut will enable us to address the growth mechanism more accurately. As noted earlier, it is encouraging that several theoretical works already exist for describing homoepitaxy of Cu on Cu(100) from the vapor phase [11]. 

Fig. 5. Schematic technique to prepare ideal Si(l 11) surfaces, (a) Use of the crystal miscut (b) Use of Triton as additive.

Crystal truncation rods vs. surface rods. All bulk Bragg points in Figure 6B are intersected by a crystal truncation rod. This is a fundamental property of a terminated lattice (Robinson 1986). The truncation rods are always oriented perpendicular to the physical surface plane, even when the surface plane and the crystallographic plane do not coincide (e.g., a miscut crystal). However, additional surface rods that do not intersect bulk Bragg points are often observed. Such rods would be associated with specific... 

Fig. 14 Typical set of / -t transients with Ei = 0.75 VjEi = 0.804 V for stepped Au(l 1 l).s crystals with various miscut angles (as indicated) in 0.05 M H2SO4. The solid lines represent calculated curves as obtained with the parameters of the numerical fit to an adsorption-nucleation model (cf Fig. 13), (reprinted from Ref. [299], copyright 1997 by VCH Verlagsgesellschaft mbH Weinheim).

Surface Steps SiC wafers are generally grown, cut, and polished such that the c-axis direction is perpendicular to the surface of the substrate. However, in some cases, for example, to control the defect density, off-axis cuts can be preferable. Miscut tolerances can be as high as +0.5° off-axis, leaving terraces on the surface that can measure multiple unit cells height. The atomic structure of the step depends on the crystal structure, vicinal angle, and the direction. 

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