Conduction band deformation potentials

Fig. 4.10. The conductivity of uniaxially compressed (111) and (100) high purity germanium crystals leads to a determination of the shear deformation potential for the designated valley minima in the energy band (after Davison and Graham [79D01]).

Chen and Sladek (1978) investigated the piezoresistance of Ti203, deduced deformation potentials for the holes and came to the conclusion that the overlap between the valence and conduction bands is never large. 

Silicon (Si). The electronic transport is due exclusively to electrons in the [100] conduction band minima and holes in the two uppermost (heavy and light) valence bands. In samples with impurity concentrations below 10 cm , the mobilities are determined by pure lattice scattering down to temperatures of about 10 K (n-type) or 50 K (p-type), for electrons and holes, respectively. Higher impurity concentrations lead to deviations from the lattice mobility at corresponding higher temperatures. For electrons, the lattice mobility below 50 K is dominated by deformation-potential coupling... 

Measurement of the DC breakdown threshold requires short voltage pulses. The electrode configuration and the purity of the sample must be designed to minimize ionic conduction, electron trapping, and space charge buildup. Then the DC breakdown field or the field measured with a voltage pulse depends on the deformation potential, the band gap, and the phonon density of states. Laser-induced breakdown... 

D A, where v,u and j c,i are the respective shifts of the upper edge of the valence band and of the lower edge of the conduction band Dy and Dc are the deformation potential constants pertaining to the valence and conduction bands, respectively. In the case of a long-wavelength lattice... 

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