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Compound semiconductors surface bulk properties

Interfaces. Interfaces play an Important role In determining the characteristics and responses of semiconductors. Typically, a layer or layers of a material Is laid down on the substrate as a metal film, as an Intermetallic or as a compound In an attempt to Impart particular electrical properties to the device. In doing so, close attention must be paid to the Interface, because the surface of a material is not like the bulk. Fortunately, films on semiconductor surfaces produce strong atomic and charge rearrangements at the microscopic Interface that changes can be characterized by XPS. As Brlllson (69) notes, XPS reveals that the "magnitude and... [Pg.158]

The last decade has seen an explosion of activity in the field as electrochemists have wrestled with unfamiliar, and often intractable, problems generated by the very wide range of materials investigated, difficulties often compounded by the use of polycrystalline samples whose bulk and surface properties have proved resistant to control. In addition to the elemental semiconductors and the III/V materials, a huge range of n- and p-type oxides, sulphides, selenides, and tellurides have been described and surface and bulk modifications carried out in the hope of enhancing photoelectrochemical efficiency. New theoretical and experimental tools have developed apace and our fundamental understanding of the semiconductor-electrolyte interface has deepened substantially. [Pg.62]


See other pages where Compound semiconductors surface bulk properties is mentioned: [Pg.102]    [Pg.542]    [Pg.270]    [Pg.412]    [Pg.47]    [Pg.1885]    [Pg.163]    [Pg.101]    [Pg.107]    [Pg.146]    [Pg.99]    [Pg.2617]    [Pg.118]    [Pg.101]    [Pg.92]    [Pg.619]    [Pg.16]    [Pg.496]    [Pg.145]    [Pg.1745]   
See also in sourсe #XX -- [ Pg.102 ]




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