Cold-Wall, Parallel-Plate PECVD Reactors

1 Cold-Wall, Parallel-Plate PECVD Reactors 

The platen is grounded, and the upper electrode is powered with a low-frequency rf power supply ( 50 kHz) at a power level of 500 to 1000 watts. The reactor operates in the batch mode with a wafer load of twenty-two 4-inch wafers, for example. For larger wafers, the load size is less. Although the load size is restricted, high quality films are produced.7 

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Finally, we will consider PECVD silicon oxynitrides, and their unique characteristics. When oxygen is added to a PECVD nitride film, there are indications that it may improve its crack resistance as a final passivation layer.13 Also, there may be advantages in terms of its electrical characteristics as an interlayer dielectric. Therefore, the nature of films grown when N20 is added to a SiH4, NH3 and He gas mixture in a high frequency (13.56 MHz), cold-wall, parallel-plate reactor have been studied. 

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